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Another strategy to integrate thin, high-quality semiconductor materials involves printing nanowires onto a low-temperature substrate57,58 In this approach, the nanowires, which may possess a core-shell structure, including a thin outer layer of high-quality silicon dioxide, are grown in an of ine reactor The nanowires are then suspended in a solution and printed onto the substrate Work to date indicates that performance approaching that of bulk Si devices can be achieved with hole mobilities of >200 cm2/V-s demonstrated Non-RF optimized devices fabricated with the nanoribbon/wire approach with gate lengths of 2 m have shown fT of over 100 MHz Perhaps of greater interest, not only Si nanowire devices can be fabricated Other semiconductor nanowire devices, including those fabricated from GaAs, InP, and CdS via the same approach, have been reported.

58 A detailed discussion of nanowire structures and synthesis, as well as their use in fabrication of electronic devices, will be given in s 10 and 11 Although both nanostructured and nanowire approaches can avoid the need for high-temperature processing of the gate insulator to facilitate fabrication on low-temperature substrates, these methods may not always be applicable Another promising approach to achieve low-temperature, yet high-quality, gate oxides is the development of solution-deposited, self-assembled nanodielectrics59,60 These dielectrics can be solution-deposited at thicknesses of 15 nm or less The resultant lms have leakage currents of less than 10 8 A/cm2 and breakdown voltages of 6 7 MV/cm Device mobility is several times higher and on-current is about 10 times higher compared with values achieved from devices with a conventionally deposited SiO2 dielectric A more complete description of solution-deposited dielectrics is presented in 4.

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Although not a classic semiconductor material, single-wall carbon nanotube (SWNT) based TFTs have also received signi cant attention for microelectronic applications recently Because of their unique properties, including potential mobilities of 10,000 cm2/V-s or higher, as well as the ease and low expense of producing them in large quantities, they provide signi cant promise for a variety of device applications These properties have also made them attractive for large-area electronics because of the possibility of achieving extremely high eld-effect mobilities via printing a nanotube suspension onto substrates61,62 Because of the extremely high intrinsic per-tube mobilities, it is expected that very high device mobilities will be possible by increasing the ll factor of tubes from the current relatively low values of 1 2% Several major challenges must be overcome in order to take full advantage of carbon nanotubes as an electronic material.

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A major barrier to very lowtemperature processing is the gate dielectric; it is dif cult to form lowtemperature deposited dielectrics with high dielectric integrity and with low hysteresis for the SWNT devices A promising solution for this problem may also be the nanodielectrics mentioned previously63 Perhaps a bigger issue is that as-grown carbon nanotubes can be either semiconducting or metallic Therefore, a means must be found either to remove the metallic tubes selectively or to render them insulating; otherwise, the metallic tubes will act as.

The DFS Management console provides two branches: Namespaces and Replication. As you might expect, you create new namespaces with the Namespaces branch. To create a namespace, click the Namespaces branch and then click New Namespace in the Actions pane, which launches the New Namespace Wizard. The wizard prompts for several items of information: Namespace Server. Enter the name of the server that will host the namespace and click Next. The wizard veri es that the DFS service is running on the target computer. If not, the wizard will ask if you want it to set the service startup mode to Automatic and start the service for you. You can accomplish these tasks manually if you prefer.

There s value in SQLOS hosting the CLR. It means that SQL Server is in control of the CLR resources. It can prevent a CLR problem, shut down and restart a CLR routine that s causing trouble, and ensure that the battle for memory is won by the right player. By default, the common language runtime is disabled in SQL Server 2005 and must be specifically enabled using the Surface Area Configuration Tool or a T-SQL set command. When enabled, each assembly s scope, or ability to access code outside SQL Server, can be carefully controlled.

When X-rays are absorbed, visible light is emitted from the sample. This is called the X-ray excited optical luminescence (XEOL). Its intensity depends on the absorbance, but does not directly depend on it, because of very complicated

(5.46)

Orthonormal Wavelets. If the functions ~ , n ( t )= 2- ~(2-"t-n), m, n E Z form an orthonormal basis for L z ( R ) , then L 2 ( R ) is decomposed into an orthogonal sum of subspaces:

5.4 8.0 7.3 7.9 3.9 4.1 3.7 6.4 6.3 6.4 7.2 5.9 6.4 5.3 5.5 2.6 7.8

(3.9)

LinkVisited (Public Instance Property)

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